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Samsung Mobile Devices with Faster AI

Samsung Unveils Ultra Slim Chips For Mobile Devices With Faster Ai

Samsung Unveils Ultra-Slim Chips for

Mobile Devices with Faster AI

 

 

 


Samsung’s ultra-compact DRAM chips are now being mass produced, which will enhance AI workload performance and thermal management.

To enhance how mobile devices handle AI workloads, Samsung has begun mass producing its LPDDR5X DRAM semiconductors, which are little chips as thin as a fingernail.


They are available in two capacities, 12GB and 16GB, and are the thinnest 12 nanometer (nm) memory chips in the market.
Because the processors are made to perform memory tasks directly on the device, the operating system of the phone can work with storage devices more quickly and effectively to manage AI workloads.

The ultra-slim LPDDR5X modules from Samsung offer greater space within a mobile device.
A larger processor specifically for AI operations can be accommodated in the narrow design, improving performance and airflow an important aspect since sophisticated AI applications produce more heat.


The chips are 9% thinner than prior Samsung DRAM 12 nm units and offer around 21% improved heat resistance.
Samsung is adding AI across its line of mobile devices. Its Galaxy AI software provides consumers using Samsung’s mobiles with various generative AI applications, such as Circle to Search, which lets users circle objects in photos to search for that object on the web intuitively.

The new DRAM chips aim to provide improved memory handling for users running Galaxy AI workloads in future Samsung mobiles.
Beyond mobiles, these chips can also be featured in smartwatches or IoT devices for faster on-device memory processing.


“Samsung’s LPDDR5X DRAM sets a new standard for high-performance on-device AI solutions, offering not only superior LPDDR performance but also advanced thermal management in an ultra-compact package,” said YongCheol Bae, Samsung’s executive vice president of memory product planning.

Beyond the new 12 nm units, Samsung said it plans to develop 6-layer 24GB and 8-layer 32GB modules for future devices
“We are committed to continuous innovation through close collaboration with our customers, delivering solutions that meet the future needs of the low-power DRAM market,” said Bae.

 

 


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